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| (R) BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Fordware Current Surge non Repetitive Forward Current* Power Dissipation* Storage and Junction Temperature Range Maximum Temperature for Soldering during 10s at 4mm from Case Ta = 25 C tp 1s 0.5 tp = 10ms Tl = 65 C DO 35 (Glass) Value 30 200 500 4 200 - 65 to +150 - 65 to +125 230 Unit V mA mA A mW C C C THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 300 Unit C/W * On infinite heatsink with 4mm lead length August 1999 Ed: 1A 1/4 BAT 42/BAT 43 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol V BR V F* Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 25C IR* Tj = 25C Tj = 100C Test Conditions IR = 100A IF = 200mA IF = 10mA IF = 50mA IF = 2mA IF = 15mA VR = 25V BAT 43 0.26 All Types BAT 42 Min. 30 1 0.4 0.65 0.33 0.45 0.5 100 A Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C trr h Tj = 25C VR = 1V Tj = 25C IF = 10mA Test Conditions f = 1MHz IR = 10mA irr = 1mA RL = 100 80 Min. Typ. 7 5 Max. Unit pF ns % Tj = 25C RL = 15K C L = 300pF f = 45MHz Vi = 2V < 2%. * Pulse test: tp 300s Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values). 2/4 (R) BAT 42/BAT 43 Figure 3. Reverse current versus junction temperature (typical values). Figure 4. Reverse current versus continuous reverse voltage. Figure 5. Capacitance C versus reverse applied voltage VR (typical values). (R) 3/4 BAT 42/BAT 43 PACKAGE MECHANICAL DATA DO 35 Glass DIMENSIONS B note 1 E A B E note 1 OC / REF. Millimeters Min. Max. 4.50 2.00 Inches Min. 0.120 0.060 0.500 Max. 0.177 0.079 A B OD / note 2 OD / 3.05 1.53 12.7 0.458 C D 0.558 0.018 0.022 Cooling method: by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as criticalcomponents in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 (R) |
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